A 40 nm inverse-narrow-width-effect-aware sub-threshold standard cell library

Proceedings - Design Automation Conference

Volumn , Issue , 2011, Pages 441-446

  Zhou, Jun ^a   Jayapal, Senthil ^b   Busze, Ben ^c   Huang, Li ^c   Stuyt, Jan ^c  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INTEL CORPORATION   (United States)

^c IMEC Holst   (Netherlands)

Author keywords

Device Sizing; Inverse Narrow Width Effect; Sub threshold

Indexed keywords

COMPUTER AIDED DESIGN; DRAIN CURRENT; ELECTRIC POWER UTILIZATION; INVERSE PROBLEMS; THRESHOLD VOLTAGE;

BASEBAND PROCESSORS; DEVICE SIZING; INVERSE NARROW WIDTH EFFECTS; STANDARD CELL; SUBTHRESHOLD; TECHNOLOGY NODES; TOTAL POWER CONSUMPTION;

DIGITAL LIBRARIES;

EID: 80052678334     PISSN: 0738100X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/2024724.2024827     Document Type: Conference Paper

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