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Volumn , Issue , 2011, Pages 340-341

A 62mV 0.13μm CMOS standard-cell-based design technique using Schmitt-trigger logic

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ENERGY HARVESTING; INTEGRATED CIRCUIT DESIGN; THRESHOLD VOLTAGE; TRIGGER CIRCUITS;

EID: 79955721005     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2011.5746345     Document Type: Conference Paper
Times cited : (32)

References (7)
  • 1
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    • A. Wang, A. Chandrakasan, "A 180mV FFT Processor Using Subthreshold Circuit Techniques," ISSCC Dig. Tech. Papers, pp. 292-293, Feb. 2004.
    • (2004) ISSCC Dig. Tech. Papers , pp. 292-293
    • Wang, A.1    Chandrakasan, A.2
  • 2
    • 77952138012 scopus 로고    scopus 로고
    • A Batteryless Thermoelectric Energy-Harvesting Interface Circuit with 35mV Startup Voltage
    • Feb.
    • Y. Ramadass, A. Chandrakasan, "A Batteryless Thermoelectric Energy-Harvesting Interface Circuit with 35mV Startup Voltage," ISSCC Dig. Tech. Papers, pp. 486-487, Feb. 2010.
    • (2010) ISSCC Dig. Tech. Papers , pp. 486-487
    • Ramadass, Y.1    Chandrakasan, A.2
  • 3
    • 41549084662 scopus 로고    scopus 로고
    • Exploring Variability and Performance in a Sub-200-mV Processor
    • Apr.
    • S. Hanson, et al., "Exploring Variability and Performance in a Sub-200-mV Processor," J. Solid-State Circuits, vol. 43, pp. 881-891, Apr. 2008.
    • (2008) J. Solid-State Circuits , vol.43 , pp. 881-891
    • Hanson, S.1
  • 4
    • 37749015480 scopus 로고    scopus 로고
    • A 85mV 40nW Process-Tolerant Subthreshold 8x8 FIR Filter in 130nm Technology
    • June
    • M. Hwang, et al., "A 85mV 40nW Process-Tolerant Subthreshold 8x8 FIR Filter in 130nm Technology," Dig. Symp. VLSI Circuits, pp. 154-155, June 2007.
    • (2007) Dig. Symp. VLSI Circuits , pp. 154-155
    • Hwang, M.1
  • 5
    • 57849166368 scopus 로고    scopus 로고
    • A 135mV 0.13 μW Process Tolerant 6T Subthreshold DTMOS SRAM in 90nm Technology
    • Sept.
    • M. Hwang, K. Roy, "A 135mV 0.13 μW Process Tolerant 6T Subthreshold DTMOS SRAM in 90nm Technology," Proc. CICC, pp. 419 -422, Sept. 2008.
    • (2008) Proc. CICC , pp. 419-422
    • Hwang, M.1    Roy, K.2
  • 6
    • 34748830993 scopus 로고    scopus 로고
    • A 160 mV Robust Schmitt Trigger Based Subthreshold SRAM
    • Oct.
    • J.P. Kulkarni, K. Kim, K. Roy, "A 160 mV Robust Schmitt Trigger Based Subthreshold SRAM," J. Solid-State Circuits, vol. 42, pp. 2303-2313, Oct. 2007.
    • (2007) J. Solid-State Circuits , vol.42 , pp. 2303-2313
    • Kulkarni, J.P.1    Kim, K.2    Roy, K.3
  • 7
    • 58149234982 scopus 로고    scopus 로고
    • t Microcontroller with Integrated SRAM and Switched Capacitor DC-DC Converter
    • Jan.
    • t Microcontroller With Integrated SRAM and Switched Capacitor DC-DC Converter," J. Solid-State Circuits, vol. 44, pp. 115-126, Jan. 2007.
    • (2007) J. Solid-State Circuits , vol.44 , pp. 115-126
    • Kwong, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.