Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications

Journal of the Society for Information Display

Volumn 21, Issue 3, 2013, Pages 129-136

  Nag, Manoj ^a,b   Chasin, Adrian ^a,b   Rockele, Maarten ^a,b   Steudel, Soeren ^a   Myny, Kris ^a,b   Bhoolokam, Ajay ^a,b   Tripathi, Ashutosh ^c   Van Der Putten, Bas ^c   Kumar, Abhishek ^c   Van Der Steen, Jan Laurens ^c   Genoe, Jan ^a   Li, Flora ^d   Maas, Joris ^d   Van Veenendaal, Erik ^d   Gelinck, Gerwin ^c   Heremans, Paul ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c HOLST CENTRE   (Netherlands)

^d Polymer Vision   (Netherlands)

Author keywords

a IGZO; display technology; metal oxide; polyimide; thin film transistors

Indexed keywords

A-IGZO; ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODES; DISPLAY TECHNOLOGIES; INDIUM-GALLIUM-ZINC OXIDES; METAL-OXIDE; OXYGEN CONCENTRATIONS; POLYETHYLENE NAPHTHALATE; VIDEO GRAPHICS ARRAY;

CARRIER CONCENTRATION; DEPOSITION; ORGANIC LIGHT EMITTING DIODES (OLED); OXYGEN; POLYIMIDES; SEMICONDUCTING INDIUM COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 84879416588     PISSN: 10710922     EISSN: 19383657     Source Type: Journal    
DOI: 10.1002/jsid.155     Document Type: Article

References (27)

1. K. Nomura, et al,., " Amorphous oxide semiconductors for high-performance flexible thin-film transistors." Nature 432, (2004).
2. E. Fortunato, et al,. in " Transparent electronics: from synthesis to applications,", A. Facchetti, and, T. J. Marks, (ed.). Wiley, Chichester (2010).
3. J. S. Park, et al,., " Review of recent developments in amorphous oxide semiconductor thin film transistor devices," Thin Solid Films 520, No. 6, 1679-1693 (2012).
4. P. Barquinha, et al,., " Toward high-performance amorphous GIZO TFTs," J. Electrochem. Soc. 156, No. 3, H161-H168 (2009).
5. J. K. Jeong, et al,., 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array, SID Symposium Digest of Technical Papers, 39, 1, 1-4 (2008).
6. J.-H. Lee, et al,., World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT, SID Symposium Digest of Technical Papers, 39, 1, 625-628 (2008).
7. H. Ohara, et al,., " In. QVGA AMOLED Display Using In-Ga-Zn-Oxide TFTs with a Novel Passivation Layer," SID Symposium Digest of Technical Papers, 40, 1, 284-287 (2009).
8. H. N. Lee, et al,., " Current Status of, Challenges to, and Perspective View of AM-OLED," IDW'06 Proc., 663-666 (2006).
9. R. E. Presley, et al,., " Transparent ring oscillator based on indium gallium oxide thin-film transistors." Solid State Electron. 50, 500-503 (2006).
10. A. K. Tripathi, et al,., " Low-voltage gallium-indium-zinc-oxide thin film transistors based logic circuits on thin plastic foil: building blocks for radio frequency identification application," Appl. Phys. Lett. 98, 162102 (2011).
11. M. Rockelé, et al,., " Low-temperature and scalable complementary thin-film technology based on solution-processed metal oxide n-TFTs and pentacene p-TFTs," Organic Electronics 12, No. 11, 1909-1913 (2011).
12. M. Rockelé, et al,., " Low-temperature and low-voltage, solution-processed metal oxide n-type TFTs and flexible circuitry on large-area polyimide foil," The 18th International Display Workschops, Session FLX 1/AMD 2-2, Nagoya Japan, (2011).
13. S. Lee, et al,., " Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors," Appl. Phy. Lett. 98, 203508 (2011).
14. T. Kamiya, and, H. Hosono, " Material characteristics and applications of transparent amorphous oxide semiconductors," NPG Asia Mater. 2, 15 (2010).
15. A. C. S. Sabioni, " About the oxygen diffusion mechanism in ZnO," Solid State Ionics 170, No. 1-2, 145-148 (2004).
16. H. Q. Chiang, et al,., " Processing effects on the stability of amorphous indium gallium zinc oxide thin-film transistors," J. Non-Cryst. Solids 354, 2826 (2008).
17. S. I. Kim, et al,., " High performance oxide thin film transistors with double active layers," Electron Devices Meeting, 2008. IEDM (2008).
18. S. I. Kim, et al,., " High Reliable and Manufacturable Gallium Indium Zinc Oxide Thin-Film Transistors Using the Double Layers as an Active Layer," Journal of The Electrochemical Society, 156, No. 3, 0013-4651, (2009).
19. J. C. Park, et al,., " Highly stable transparent amorphous oxide semiconductor thin-film transistors having double-stacked active layers ", Advanced Materials, 22, No. 48, 5512-5516 (2010).
20. S.-L. Wang, et al,., " High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures," Appl. Phys. Lett. 100, 063506 (2012).
21. J.-S. Park, et al,., " Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment," Appl. Phys. Lett. 90, 262106 (2007).
22. T. Iwasaki, et al,., " Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: an application to amorphous oxide semiconductors in InGaZnO system," Appl. Phys. Lett. 90, 242114 (2007).
23. E. N. Cho, et al,., " Analysis of bias stress instability in amorphous InGaZnO thin-film transistors," IEEE Trans. Device Mater. Reliab. 11, No. 1, 112-117 (2011).
24. K. S. Son, et al,., " Threshold voltage control of amorphous gallium indium zinc oxide TFTs by suppressing back-channel current," Electrochem. Solid-State Lett. 12, No. 1, H26-H28 (2009).
25. 3-ZnO TFT technology", in Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, (2008), pp. 81-84.
26. H.-H. Hsieh, et al,., " Active-matrix organic light-emitting diode displays with indium gallium zinc oxide thin-film transistors and normal, inverted, and transparent organic light-emitting diodes," J. Soc. Info. Display 19, 323 (2011).
27. P. van de Weijer, et al,., " Thin-film encapsulation of organic LEDs," in Proceedings of OSC-08 (2008).