Active-matrix organic light-emitting diode displays with indium gallium zinc oxide thin-film transistors and normal, inverted, and transparent organic light-emitting diodes

Journal of the Society for Information Display

Volumn 19, Issue 4, 2011, Pages 323-328

  Hsieh, Hsing Hung ^a   Tsai, Tsung Ting ^a   Chang, Chin Yu ^a   Hsu, Shih Feng ^a   Chuang, Ching Sang ^a   Lin, Yusin ^a  

^a AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

Indium gallium zinc oxide; Inverted organic light emitting devices; Oxide semiconductors; Thin film transistors; Transparent displays

Indexed keywords

ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODES; AM-OLED; BACK CHANNELS; BIAS STRESS; DISPLAY INDUSTRY; DRIVING CHARACTERISTICS; DRIVING SCHEMES; HIGH RESOLUTION; HIGH TRANSPARENCY; INDIUM GALLIUM ZINC OXIDES; INVERTED ORGANIC LIGHT-EMITTING DEVICES; ORGANIC LIGHT-EMITTING DEVICES; OXIDE SEMICONDUCTORS; PLASMA TREATMENT; PROTECTION LAYERS; SEMI-TRANSPARENT MATERIALS; TRANSPARENT DISPLAYS; TRANSPARENT ORGANIC LIGHT-EMITTING DIODES;

CURRENT DENSITY; ELECTRONIC EQUIPMENT; INDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); PLASMA APPLICATIONS; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; THIN FILM TRANSISTORS; ZINC; ZINC OXIDE;

DISPLAY DEVICES;

EID: 79953154594     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/JSID19.4.323     Document Type: Article

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