Low-temperature and scalable complementary thin-film technology based on solution-processed metal oxide n-TFTs and pentacene p-TFTs

Organic Electronics

Volumn 12, Issue 11, 2011, Pages 1909-1913

  Rockelé, Maarten ^a,b   Pham, Duy Vu ^c   Hoppe, Arne ^c   Steiger, Jürgen ^c   Botnaras, Silviu ^c   Nag, Manoj ^a   Steudel, Soeren ^a   Myny, Kris ^a,b   Schols, Sarah ^a   Müller, Robert ^a   Van Der Putten, Bas ^d   Genoe, Jan ^a   Heremans, Paul ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c EVONIK DEGUSSA GMBH   (Germany)

^d TNO   (Netherlands)

Author keywords

CMOS; Complementary technology; Organic circuits; Organic inorganic hybrid; Solution processed oxide TFT; Thin film transistors

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; METALLIC COMPOUNDS; METALS; ORGANIC-INORGANIC MATERIALS; SEMICONDUCTING ORGANIC COMPOUNDS; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS;

COMPLEMENTARY LOGIC; INTEGRATION PROCESS; MAXIMUM TEMPERATURE; ORGANIC CIRCUITS; ORGANIC-INORGANIC HYBRID; OXIDE TFT; SATURATION MOBILITY; THIN-FILM TECHNOLOGY;

THIN FILM TRANSISTORS;

EID: 80052689579     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2011.08.009     Document Type: Article

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