SixCy thin films deposited at low temperature by DC dual magnetron sputtering: Effect of power supplied to Si and C cathode targets on film physicochemical properties

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 197-201

  Medeiros, H S ^a   Pessoa, R S ^a,b   Sagas J C ^a   Fraga, M A ^a,c   Santos, L V ^a,b   Maciel, H S ^a,b   Massi, M ^a   Da Silva Sobrinho, A S ^a  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b INSTITUTO DE PESQUISA E DESENVOLVIMENTO   (Brazil)

^c Institute for Advanced Studies   (Brazil)

Author keywords

Chemistry analysis; DC dual magnetron sputtering; Film stoichiometry; Low temperature deposition; Silicon carbide thin films

Indexed keywords

AMORPHOUS SILICON; BOND STRENGTH (CHEMICAL); CATHODES; CHEMICAL ANALYSIS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT ABSORPTION; MAGNETRON SPUTTERING; PHYSICOCHEMICAL PROPERTIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; TEMPERATURE;

CHEMISTRY ANALYSIS; DC DUAL MAGNETRON SPUTTERING; FILM STOICHIOMETRY; LOW-TEMPERATURE DEPOSITION; SILICON CARBIDE THIN FILM;

THIN FILMS;

EID: 84861414871     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.197     Document Type: Conference Paper

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