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Volumn 61, Issue 25, 2007, Pages 4731-4734
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Effect of substrate temperature on HWCVD deposited a-SiC:H film
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Author keywords
a SiC:H; FTIR; HWCVD; Photoluminescence; Raman
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Indexed keywords
CARBON;
CHEMICAL VAPOR DEPOSITION;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
PHOTOLUMINESCENCE;
SILICON COMPOUNDS;
HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);
HYDROGEN DILUTION;
NETWORK PROPERTIES;
SUBSTRATE TEMPERATURE;
AMORPHOUS FILMS;
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EID: 34548126966
PISSN: 0167577X
EISSN: None
Source Type: Journal
DOI: 10.1016/j.matlet.2007.03.029 Document Type: Article |
Times cited : (25)
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References (18)
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