InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Riel, H ^a   Moselund, K E ^a   Bessire, C ^a   Bjork, M T ^b   Schenk, A ^c   Ghoneim, H ^a   Schmid, H ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b Ideon Science Park   (Sweden)

^c ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GATE-ALL-AROUND; HIGH CURRENTS; HIGH-K DIELECTRIC; INVERSE SUBTHRESHOLD SLOPES; MATERIAL SYSTEMS; REVERSE BIAS; TOP CONTACT; VERTICAL TUNNEL DIODES;

ELECTRON DEVICES; GATE DIELECTRICS; HETEROJUNCTIONS; NANOWIRES; TUNNEL DIODES;

SILICON;

EID: 84876097425     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479056     Document Type: Conference Paper

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