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Volumn , Issue , 2012, Pages

Novel gate-recessed vertical InAs/GaSb TFETs with record high I ON of 180 μa/μm at VDS = 0.5 v

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCE; BAND ALIGNMENTS; CAPACITANCE VOLTAGE MEASUREMENTS; DRAIN CONTACTS; INTERFACIAL TRAP DENSITIES; ON-CURRENTS; SUB-THRESHOLD SWING(SS); TUNNEL FIELDEFFECT TRANSISTOR (TFETS);

EID: 84876155290     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479154     Document Type: Conference Paper
Times cited : (60)

References (11)
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    • Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
    • R. Engel-Herbert, Y. Hwang, and S. Stemmer, "Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces," J. App. Phys., vol. 108, p. 124101, 2010.
    • (2010) J. App. Phys , vol.108 , pp. 124101
    • Engel-Herbert, R.1    Hwang, Y.2    Stemmer, S.3
  • 7
    • 79952395772 scopus 로고    scopus 로고
    • Improving the on-current of In0.7Ga0.3As tunneling field-effect- transistors by p++/ n+ tunneling junction
    • H. Zhao, Y. Chen, Y. Wang, F. Zhou, F, Xue, and J. Lee, "Improving the on-current of In0.7Ga0.3As tunneling field-effect-transistors by p++/ n+ tunneling junction," Appl. Phys. Lett., vol. 98, no. 9, p. 093501, 2011.
    • (2011) Appl. Phys. Lett , vol.98 , Issue.9 , pp. 093501
    • Zhao, H.1    Chen, Y.2    Wang, Y.3    Zhou Xue, F.F.4    Lee, J.5
  • 11
    • 81555207228 scopus 로고    scopus 로고
    • Tunnel field-effect transistors as energyefficient electronics switches
    • A. M. Ionescu and H. Riel, "Tunnel field-effect transistors as energyefficient electronics switches," Nature, vol. 479, p. 329, 2011.
    • (2011) Nature , vol.479 , pp. 329
    • Ionescu, A.M.1    Riel, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.