Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Oyama, Yutaka ^a,b   Ohno, Takeo ^a   Suto, Ken ^a,b   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

A1. Doping; A1. Impurities; A1. Interfaces; A3. Atomic layer epitaxy; A3. Selective epitaxy; B2. Semiconducting gallium arsenide

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; PHOTOLITHOGRAPHY; SILICON NITRIDE; SURFACE TREATMENT; TUNNEL JUNCTIONS;

ATOMIC LAYER EPITAXY; JUNCTION CAPACITANCE; LOW-TEMPERATURE AREA-SELECTIVE REGROWTH (LT-ASR); SELECTIVE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 15844403049     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.137     Document Type: Conference Paper

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