Carbon diffusion behavior in a GaAs tunnel junction with a heavily carbon doped p+-layer by metalorganic molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6300-6301

  Oh, Je Hwan ^a   Hayakawa, Nobuhiro ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Carbon; Diffusion behavior; Heavily carbon doped GaAs; MOMBE; Thermal and current induced diffusion coefficients; Trimethylgallium; Tunnel diode

Indexed keywords

ACTIVATION ENERGY; CARBON; CRYSTAL IMPURITIES; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL DIFFUSION IN SOLIDS; TUNNEL DIODES;

METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE); TRIMETHYLGALLIUM;

TUNNEL JUNCTIONS;

EID: 0031247824     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6300     Document Type: Article

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