Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 73, Issue 19, 1998, Pages 2799-2801

  Hu, J ^a   Xu, X G ^a   Stotz, J A H ^a   Watkins, S P ^a   Curzon, A E ^a   Thewalt, M L W ^a   Matine, N ^a   Bolognesi, C R ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 12344305232     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122594     Document Type: Article

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