Sub-micron InGaAs Esaki diodes With record high peak current density

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 163-164

  Pawlik, D ^a   Barth, M ^a   Thomas, P ^a   Kurinec, S ^a   Mookerjea, S ^b   Mohata, D ^b   Datta, S ^b   Cohen, S ^c   Ritter, D ^c   Rommel, S ^a  

^a Rochester Institute of Technology   (United States)

^b The Pennsylvania State University   (United States)

^c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SUB-MICRON; ESAKI DIODE; HIGH-PEAK CURRENTS; OUTPUT CURRENT; PEAK CURRENT DENSITY; SERIES RESISTANCES; SUBMICRON; SUBTHRESHOLD SLOPE; TUNNELING FIELD-EFFECT TRANSISTORS; ULTRA LOW POWER;

DIODES; SEMICONDUCTING INDIUM; TUNNEL DIODES; TUNNEL JUNCTIONS;

FIELD EFFECT TRANSISTORS;

EID: 77957566781     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551888     Document Type: Conference Paper

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