Barrier-engineered arsenide-antimonide heterojunction tunnel FETs with enhanced drive current

IEEE Electron Device Letters

Volumn 33, Issue 11, 2012, Pages 1568-1570

  Mohata, Dheeraj ^a   Rajamohanan, Bijesh ^a   Mayer, Theresa ^a   Hudait, Mantu ^b   Fastenau, Joel ^c   Lubyshev, Dmitri ^c   Liu, Amy W K ^c   Datta, Suman ^a  

^a The Center for Nanotechnology Education and Utilization   (United States)

^b Virginia Polytechnic Institute and State University   (United States)

^c IQE INC   (United States)

Author keywords

GaAsSb; InGaAs; stagger; tunnel field effect transistors (TFETs)

Indexed keywords

DRAIN-INDUCED BARRIER; DRIVE CURRENTS; ELECTRICAL OXIDE THICKNESS; GAAS; GAASSB; HOMOJUNCTION; INGAAS; STAGGER; TUNNEL FET; TUNNELING BARRIER HEIGHTS;

FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; HETEROJUNCTIONS; INDIUM;

SEMICONDUCTING GALLIUM;

EID: 84867896086     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2213333     Document Type: Article

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