Performances of the negative tone resist AZnLOF 2020 for nanotechnology applications

IEEE Transactions on Nanotechnology

Volumn 11, Issue 4, 2012, Pages 854-859

  Herth, E ^a   Algre E ^b   Tilmant, P ^c   Francois M ^c   Boyaval, C ^c   Legrand, B ^c  

^a FEMTO ST INSTITUTE   (France)

^b National Centre of Scientific Research   (France)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

AZnLOF 2020; electron beam lithography; negative UV resist

Indexed keywords

AZNLOF 2020; DENSE PATTERNS; DEVELOPMENT TIME; DOSE EFFECTS; HIGH RESOLUTION; HIGH-ASPECT RATIO; NEGATIVE TONE RESIST; NEGATIVE UV RESIST; NOMINAL FEATURE; POSTBAKING; RESIST MATERIALS; SMALL FEATURES; TEST PATTERN;

ELECTRON BEAM LITHOGRAPHY;

ASPECT RATIO;

EID: 84863756804     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2012.2196802     Document Type: Article

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