Influence of O2 pressure on the properties of heavily-doped ZnO:Sb thin films grown by pulsed laser deposition

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 6, 2013, Pages 1976-1980

  Gu, X Q ^a,b   Zhu, L P ^b  

^a CHINA UNIVERSITY OF MINING AND TECHNOLOGY   (China)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VALENCE; GLASS SUBSTRATES; HALL MEASUREMENTS; HIGH RESISTIVITY; INTRINSIC DEFECTS; OPTICAL AND ELECTRICAL PROPERTIES; PHOTOELECTRON SPECTROSCOPY (XPS); TRANSMITTANCE SPECTRA;

METALLIC FILMS; PHOTOELECTRON SPECTROSCOPY; PULSED LASER DEPOSITION; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84878719970     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-012-1044-7     Document Type: Article

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