Dopant sources choice for formation of p-type ZnO: Phosphorus compound sources

Chemistry of Materials

Volumn 17, Issue 4, 2005, Pages 852-855

  Yu, Zhi Gen ^a,b   Gong, Hao ^b   Wu, Ping ^a  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); MATHEMATICAL MODELS; PHOSPHORUS COMPOUNDS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR MATERIALS;

DOPANT SELECTION; DOPANTS; THERMOCHEMISTRY; WIDE-GAP SEMICONDUCTORS;

ZINC OXIDE;

PHOSPHORUS DERIVATIVE; ZINC OXIDE;

ARTICLE; DENSITY FUNCTIONAL THEORY; PREDICTION; REACTION ANALYSIS; SEMICONDUCTOR; SYNTHESIS; TEMPERATURE DEPENDENCE;

EID: 13944283752     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm0482176     Document Type: Article

References (38)

1. Zhang, S. B.; Wei S.-H.; Zunger, A. J. Appl. Phys. 1998, 83, 3192.
2. Kawazoe, H.; et al. Nature 1997, 389, 939.
3. Li, X.; et al., Electrochem. Solid State Lett. 2003, 6, c56.
4. Guo, X.-L.; Tabata, H.; Kawai, T. Opt. Mater. 2002, 19, 229. Guo, X.-L.; Tabata, H.; Kawai, T. J. Cryst. Growth 2001, 223, 135.
5. Guo, X.-L.; Tabata, H.; Kawai, T. Opt. Mater. 2002, 19, 229. Guo, X.-L.; Tabata, H.; Kawai, T. J. Cryst. Growth 2001, 223, 135.
6. Li, X.; et al. J. Vac. Sci. Technol. A 2003, 21, 1342.
7. Aoki, T.; Hatanaka, Y.; Look, D. C. Appl. Phys. Lett. 2000, 76, 3257.
8. Kim, K.-K.; Kim, H.-S.; Hwang, D.-K.; Lim, J.-H.; Park, S.-J. Appl. Phys. Lett. 2003, 83, 63.
9. Bang, K.-H.; et al. Appl. Surf. Sci. 2003, 210, 177.
10. Heo, Y. W.; et al. Appl. Phys. Lett. 2003, 83, 1128 Heo, Y. W.; et al. Appl. Phys. A 2004, 78, 53.
11. Heo, Y. W.; et al. Appl. Phys. Lett. 2003, 83, 1128 Heo, Y. W.; et al. Appl. Phys. A 2004, 78, 53.
12. Tsukazaki, A.; et al. Appl. Phys. Lett. 2002, 81, 235.
13. Sanmyo, M.; Tomita, Y.; Kobayashi, K. Chem. Mater. 2003, 15, 819.
14. Yamamoto, T.; Hiroshi, K.-Y. Jpn. J. Appl. Phys. 1999, 58, L166-L169.
15. Ohshima, T.; Ikegami, T.; Ebihara, K.; Asmussen, J.; Thareja, R. Thin Solid Films 2003, 455, 49.
16. Wang, L. G.; Zunger A. Phys. Rev. B 2003, 68, 125211.
17. Bian, J. M.; Li, X. M.; Chen, L. D.; Yao, Q. Chem. Phys. Lett. 2004, 295, 256.
18. Oba, F.; Nishitani, S. N.; Isotani, S.; Adachi, H. J. Appl. Phys. 2001, 90, 824.
19. Zhang, S. B.; Wei, S.-H.; Zunger, A. Phys. Rev. B 2001, 63, 075205.
20. Lee, E.-C; Kim, Y.-S.; Jin, Y.-G.; Chang, K. J. Phys. Rev. B 2001, 64, 085120.
21. Lee, E.-C.; Kim, Y.-S.; Jin, Y.-G.; Chang, K. J. Physica B 2001, 308-310, 912.
22. Kohn, W.; Sham, L. J. Phys. Rev. 1965, 140, A1133.
23. Jones, R. O.; Gunnarsson, O. Rev. Mod. Phys. 1989, 61, 689.
24. Perdew, J. P.; et al. Phys. Rev. B 1992, 46, 6671.
25. Ihm, J.; Zunger, A.; Cohen, M. L. J. Phys. C 1979, 12, 4409.
26. Payne, M. C.; et al. Rev. Mod. Phys. 1992, 64, 1050.
27. Milman, V.; et al. Int. J. Quantum Chem. 2000, 77, 895.
28. Kresse, G.; Furthmüller, J. Phys. Rev. B 1996, 54, 11169.
29. Press: W. H.; Teukolsky, S. A.; Vetterling, W. T.; Flannery, B. P. Numerical Recipes in FORTRAN: The Art of Scientific Computing, 2nd ed.; Cambridge University Press: Cambridge. 1992; p 418.
30. Vanderbilt, D. Phys. Rev. B 1990, 41, 7892.
31. Laasonen, K.; Car, R.; Lee, C.; Vanderbilt, D. Phys. Rev. B 1991, 43, 6796.
32. Zhi, G. Y.; Hao, G.; Ping, W. Unpublished. Kohan, A. F.; Ceder, G.; Morgan, D.; Van de Walle, C. G. Phys. Rev. B 2000, 61, 15019.
33. Zhi, G. Y.; Hao, G.; Ping, W. Unpublished. Kohan, A. F.; Ceder, G.; Morgan, D.; Van de Walle, C. G. Phys. Rev. B 2000, 61, 15019.
34. Makov, G.; Payne, M. C. Phys. Rev. B 1995, 51, 4014.
35. Lento, J.; Mozos J.-L.; Nieminen, R. M. J. Phys.: Condens. Matter 2002, 14, 2637.
36. Cox, J. D.; Wagman, D. D.; Medvedev, V. A. CODATA key values for thermodynamics; Hemisphere: New York, 1989; p 48.
37. Wyckoff, R. W. Crystal Structures, 2nd ed.; Robert E. Krieger Publishing Co.: Malabar, FL, 1986; Vol. 1, p 184.
38. Bale, C. W.; et al. Calphad 2002, 26, 189.