High tunability in (111)-oriented relaxor Pb0.8Ba 0.2ZrO3 thin film with antiferroelectric and ferroelectric two-phase coexistence

Journal of the American Ceramic Society

Volumn 96, Issue 6, 2013, Pages 1852-1856

  Peng, Biaolin ^a,b   Fan, Huiqing ^a   Zhang, Qi ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b CRANFIELD UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI FERROELECTRICS; DIELECTRIC STRENGTHS; DIELECTRIC TUNABILITY; FIGURE OF MERITS; HIGH BREAKDOWN; HIGH TEMPERATURE STABILITY; HIGH TUNABILITY; ROOM TEMPERATURE;

ANTIFERROELECTRICITY; FERROELECTRICITY; LEAD; SOL-GEL PROCESS; STRENGTH OF MATERIALS; THIN FILMS; ZIRCONIUM ALLOYS;

FILM THICKNESS;

EID: 84878699031     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12269     Document Type: Article

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