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Applied Physics Letters

Volumn 75, Issue 14, 1999, Pages 2129-2131

The effect of stress on the dielectric properties of barium strontium titanate thin films

(6) Shaw, T M a Suo, Z b Huang, M b Liniger, E a Laibowitz, R B a Baniecki, J D c

a IBM T J WATSON RESEARCH CENTER (United States)

b Princeton University (United States)

c Department of Earth and Environmental Sciences (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; FERROELECTRIC MATERIALS; FILM GROWTH; RANDOM ACCESS STORAGE; RESIDUAL STRESSES; SILICON; SUBSTRATES; TENSILE STRESS; THIN FILMS;

BARIUM STRONTIUM TITANATE THIN FILMS; STRESS FREE CAPACITANCE;

DIELECTRIC FILMS;

EID: 0032606663 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124939 Document Type: Article

Times cited : (304)

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