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Volumn 91, Issue 13, 2007, Pages
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Improved dielectric properties of Al2 O3 -doped Pb0.6 Ba0.4 Zr O3 thin films for tunable microwave applications
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
CAPACITANCE MEASUREMENT;
DIELECTRIC PROPERTIES;
MICROWAVE DEVICES;
SEMICONDUCTOR DOPING;
DISSIPATION FACTOR;
FIGURE OF MERIT (FOM);
LOSS MECHANISM;
TUNABLE MICROWAVE APPLICATIONS;
THIN FILMS;
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EID: 34848812842
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2785130 Document Type: Article |
Times cited : (10)
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References (20)
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