Tunable electric properties of PbZrO 3 films related to the coexistence of ferroelectricity and antiferroelectricity at room temperature

Applied Physics Letters

Volumn 100, Issue 21, 2012, Pages

  Liu, Yaoyang ^a   Lu, Xiaomei ^a   Jin, Yaming ^a   Peng, Song ^a   Huang, Fengzhen ^a   Kan, Yi ^a   Xu, Tingting ^a   Min, Kangli ^a   Zhu, Jinsong ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI FERROELECTRICS; CURRENT CHANGE; DIELECTRIC SPECTRA; DIELECTRIC TUNABILITY; FERROELECTRIC PHASIS; FERROELECTRICITY AND ANTIFERROELECTRICITY; FOUR-ORDER; I - V CURVE; METALORGANIC DECOMPOSITION METHOD; P-E HYSTERESIS LOOPS; POLYCRYSTALLINE; POTENTIAL APPLICATIONS; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; TUNABLE MATERIALS; VOLTAGE-CONTROLLED;

ANTIFERROELECTRICITY; FERROELECTRIC FILMS; FERROELECTRICITY;

ELECTRIC PROPERTIES;

EID: 84861802491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4720146     Document Type: Article

References (35)

1. X. N. Dang, H. J. Yi, M. H. Ham, J. F. Qi, D. S. Yun, R. Ladewski, M. S. Strano, P. T. Hammond, and A. M. Belcher, Nat. Nanotechnol. 6, 377 (2011). 10.1038/nnano.2011.50
2. A. N. Shipway, E. Katz, and I. Willner, Chemphyschem 1, 18 (2000). 10.1002/1439-7641(20000804)1:1<18::AID-CPHC18>3.0.CO;2-L
3. P. Jayanta and S. B. Krupanidhi, Appl. Phys. Lett. 92, 192901 (2008). 10.1063/1.2928230
4. S. Lagerwall, A. Dahlgren, P. Jägemalm, P. Rudquist, K. D'havé, H. Pauwels, R. Dabrowski, and W. Drzewinski, Adv. Funct. Mater. 11, 87 (2001). 10.1002/1616-3028(200104)11:2<87::AID-ADFM87>3.0.CO;2-E
5. Y. H. Chu, T. Zhao, M. P. Cruz, Q. Zhan, P. L. Yang, L. W. Martin, M. Huijben, C. H. Yang, F. Zavaliche, H. Zheng, and R. Ramesh, Appl. Phys. Lett. 90, 252906 (2007). 10.1063/1.2750524
6. M. Alexe, D. Hesse, V. Schmidt, S. Senz, H. J. Fan, M. Zacharias, and U. Gösele, Appl. Phys. Lett. 89, 172907 (2006). 10.1063/1.2364260
7. R. E. Newnham and S. Trolier-McKinstry, Integr. Ferroelectr. 20, 1 (1998). 10.1080/10584589808238761
8. L. B. Kong and J. Ma, Appl. Phys. Lett. 77, 2584 (2000). 10.1063/1.1319184
9. S. Watanabe and Y. Koyama, Phys. Rev. B 66, 134102 (2002). 10.1103/PhysRevB.66.134102
10. K. Boldyreva, D. H. Bao, G. L. Rhun, L. Pintilie, M. Alexe, and D. Hesse, J. Appl. Phys. 102, 044111 (2007). 10.1063/1.2769335
11. J. W. Zhai and H. Chen, Appl. Phys. Lett. 82, 2673 (2003). 10.1063/1.1569420
12. B. A. Scott and G. Burns, J. Am. Ceram. Soc. 55, 331 (1972). 10.1111/j.1151-2916.1972.tb11303.x
13. Z. Ujma, J. Haderek, and M. Kupiszewska, J. Eur. Ceram. Soc. 22, 817 (2002). 10.1016/S0955-2219(01)00399-5
14. T. Bongkarn, G. Rujijanagul, and S. J. Milne, Appl. Phys. Lett. 92, 092905 (2008). 10.1063/1.2890060
15. L. Pintilie, K. Boldyreva, M. Alexe, and D. Hesse, J. Appl. Phys. 103, 024101 (2008). 10.1063/1.2831023
16. B. P. Pokharel and D. Pandey, J. Appl. Phys. 86, 3327 (1999). 10.1063/1.371209
17. B. P. Pokharel and D. Pandey, J. Appl. Phys. 88, 5364 (2000). 10.1063/1.1317241
18. T. M. Correia and Q. Zhang, J. Appl. Phys. 108, 044107 (2010). 10.1063/1.3466754
19. C. H. Li, X. Q. Zhang, Z. H. Cheng, and Y. Sun, Appl. Phys. Lett. 92, 182903 (2008). 10.1063/1.2920775
20. A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venkatesh, and N. Setter, J. Electroceram. 11, 5 (2003). 10.1023/B:JECR.0000015661.81386.e6
21. P. Padmini, T. R. Taylor, M. J. Lefevre, A. S. Nagra, R. A. York, and J. S. Speck, Appl. Phys. Lett. 75, 3186 (1999). 10.1063/1.125272
22. T. M. Correia and Q. Zhang, J. Appl. Phys. 108, 044107 (2010). 10.1063/1.3466754
23. H. N. Al-Shareef, D. Dimos, M. V. Raymond, R. W. Schwartz, and C. H. Mueller, J. Electroceram. 1, 145 (1997). 10.1023/A:1009924716633
24. X. J. Lou and J. Wang, Appl. Phys. Lett. 96, 102906 (2010). 10.1063/1.3358138
25. S. W. Lee, O. S. Kwon, J. H. Han, and C. S. Hwang, Appl. Phys. Lett. 92, 222903 (2008). 10.1063/1.2939102
26. L. M. B. Alldredge, W. Chang, S. W. Kirchoefer, and J. M. Pond, Appl. Phys. Lett. 94, 052904 (2009). 10.1063/1.3079093
27. J. W. Liou and B. S. Chiou, J. Mater. Sci.: Mater. Electron. 11, 637 (2000). 10.1023/A:1008945200078
28. S. G. Lu, X. H. Zhu, C. L. Mak, K. H. Wong, H. L. W. Chan, and C. L. Choy, Appl. Phys. Lett. 82, 2877 (2003). 10.1063/1.1569427
29. F. Zimmermann, M. Voigts, W. Menesklou, and E. Ivers-Tiffée, J. Eur. Ceram. Soc. 24, 1729 (2004). 10.1016/S0955-2219(03)00481-3
30. H. T. Lue, C. Y. Liu, and T. Y. Tseng, IEEE Electron Device Lett. 23, 553 (2002). 10.1109/LED.2002.802588
31. K. Roleder, M. Maglione, M. D. Fontana, and J. Dec, J. Phys.: Condens. Matter 8, 10669 (1996). 10.1088/0953-8984/8/49/051
32. Z. C. Wang, V. Kugler, U. Helmersson, N. Konofaos, E. K. Evangelou, S. Nakao, and P. Jin, Appl. Phys. Lett. 79, 1513 (2001). 10.1063/1.1398321
33. G. D. Mahan, L. M. Levinson, and H. R. Philipp, J. Appl. Phys. 50, 2799 (1979). 10.1063/1.326191
34. R. L. Brutchey, G. S. Cheng, Q. Gu, and D. E. Morse, Adv. Mater. 20, 1029 (2008). 10.1002/adma.200701804
35. M. A. L. Nobre and S. Lanfredi, Appl. Phys. Lett. 81, 451 (2002). 10.1063/1.1494101