Fabrication and tunable dielectric properties of magnesium-doped lead barium zirconate thin films

Journal of the American Ceramic Society

Volumn 93, Issue 3, 2010, Pages 646-649

  Hao, Xihong ^a,b   Zhai, Jiwei ^a   Ren, Huiping ^b   Song, Xiwen ^b   Yang, Jichun ^b  

^a TONGJI UNIVERSITY   (China)

^b INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PERMITTIVITIES; ELECTRICAL PROPERTY; FIGURE OF MERIT; LEAD BARIUM ZIRCONATE; MAXIMUM VALUES; MG CONTENT; MG-DOPED; MG-DOPING; PT(111); SI SUBSTRATES; SOL-GEL METHODS; TEMPERATURE DEPENDENT; TIO; TUNABLE DIELECTRIC PROPERTIES;

BARIUM; BARIUM ZIRCONATE; DIELECTRIC LOSSES; DOPING (ADDITIVES); ELECTRIC PROPERTIES; LEAD; MAGNESIUM; PERMITTIVITY; PLATINUM; SECONDARY BATTERIES; SILICON COMPOUNDS; SOL-GEL PROCESS;

THIN FILMS;

EID: 77649197686     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2009.03487.x     Document Type: Article

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