Effect of donor, acceptor, and donor-acceptor codoping on the electrical properties of Ba0.6Sr0.4TiO3 thin films for tunable device applications

Journal of the American Ceramic Society

Volumn 92, Issue 11, 2009, Pages 2759-2761

  Zhang, Yuanyuan ^a   Wang, Genshui ^a   Chen, Ying ^a   Cao, Fei ^a   Yang, Lihui ^a   Dong, Xianlin ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BST FILM; CO-DOPED; CO-DOPING; DONOR AND ACCEPTOR; DONOR-ACCEPTORS; ELECTRICAL PROPERTY; ELECTRONIC CONDUCTION MECHANISM; FIGURE OF MERIT; LOSS TANGENT; METALORGANIC SOLUTION DEPOSITION TECHNIQUES; TIO; TUNABLE DEVICE;

BARIUM; DEPOSITION; DIELECTRIC PROPERTIES; THIN FILMS;

DOPING (ADDITIVES);

EID: 70350517636     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2009.03237.x     Document Type: Article

References (25)

1. K. M. Johnson Variation of Dielectric Constant with Voltage in Ferroelectrics and its Application to Parametric Devices J. Appl. Phys., 33, 2826 2831 (1962).
2. X. X. Xi, H. C. Li, W. D. Si, A. A. Sirenko, I. A. Akimov, J. R. Fox, A. M. Clark J. H. Hao Oxide Thin Films for Tunable Microwave Devices J. Electroceram., 4, 393 405 (2000).
3. M. Dawber, K. M. Rabe J. F. Scott Physics of Thin-Film Ferroelectric Oxides Rev. Mod. Phys., 77, 1083 1130 (2005).
4. A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venkatesh N. Setter Ferroelectric Materials for Microwave Tunable Applications J. Electroceram., 11, 5 66 (2003).
5. 3 Films Appl. Phys. Lett., 78, 533 535 (2001). (Pubitemid 33629956)
6. 3 Thin Films for Tunable Device Applications J. Appl. Phys., 89, 6336 6340 (2001).
7. 3 Thin Films Appl. Phys. Lett., 87, 152901 3 (2005).
8. 3 Thin Films for Tunable Microwave Device Applications J. Appl. Phys., 92, 475 483 (2002).
9. 3 Thin Films Appl. Surf. Sci., 255, 4521 4525 (2009).
10. 3 Films on Increase in Dielectric Constant Jpn. J. Appl. Phys., 41, 6060 6064 (2002).
11. 3 Thin Films Appl. Phys. Lett., 92, 102902 (2008).
12. X. F. Liang, Z. Y. Meng W. B. Wu Effect of Acceptor and Donor Dopants on the Dielectric and Tunable Properties of Barium Strontium Titanate J. Am. Ceram. Soc., 87, 2218 2222 (2004).
13. W. C. Hu, C. R. Yang, W. L. Zhang Y. Qiu Dielectric Characteristics of Sol-Gel-Derived BST/BSLaT/BST Multilayer J. Sol-Gel Sci. Technol., 36, 249 255 (2005).
14. 3 Doping on the Tunable and Dielectric Properties of BST/MgO Composite for Microwave Tunable Application Mater. Chem. Phys., 95, 222 228 (2006).
15. 3 Thin Films Prepared by Metallo-Organic Deposition Method Jpn. J. Appl. Phys., 40, 4974 4978 (2001).
16. 3 Thin Films Fabricated by Sol-Gel Method J. Cryst. Growth, 290, 121 126 (2006).
17. S. T. Chen, G. S. Wang, Y. Y. Zhang, L. H. Yang X. L. Dong Orientation Control Growth of Lanthanum Nickelate Thin Films Using Chemical Solution Deposition J. Am. Ceram. Soc., 90, 3635 3637 (2007).
18. 3 Heterostructures Prepared by Chemical Solution Routes Appl. Phys. Lett., 78, 4172 4174 (2001). (Pubitemid 33599454)
19. 3 Capacitor Appl. Phys. Lett., 84, 4116 4118 (2004).
20. C. J. Peng S. B. Krupanidhi Structures and Electrical-Properties of Barium Strontium-Titanate Thin-Films Grown by Multi-Ion-Beam Reactive Sputtering Technique J. Mater. Res., 10, 708 726 (1995).
21. S. B. Krupanidhi C. J. Peng Studies on Structural and Electrical Properties of Barium Strontium Titanate Thin Films Developed by Metallo-Organic Decomposition Thin Solid Films, 305, 144 156 (1997).
22. 3 Thin Films Appl. Phys. Lett., 75, 2554 2556 (1999).
23. 3 Ceramics J. Appl. Phys., 78, 5042 5047 (1995).
24. 3 Thin Films Thin Solid Films, 305, 66 73 (1997).
25. 3 System J. Inorg. Nucl. Chem., 20, 32 8 (1961).