Carbon nanotubes horizontal interconnects with end-bonded contacts, diameters down to 50 nm and lengths up to 20 μm

Carbon

Volumn 60, Issue , 2013, Pages 139-145

  Chiodarelli, N ^a   Fournier, A ^a   Okuno, H ^a   Dijon, J ^a  

^a DIF   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES BUNDLE; CONTACT RESISTIVITIES; COPPER INTERCONNECTS; ELECTRICAL MEASUREMENT; METALLIZATION PROCESS; SPECIFIC CONTACT RESISTIVITY; WALL DENSITY; WIRE DIAMETER;

COPPER; WIRE;

CARBON NANOTUBES;

EID: 84878530255     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2013.03.063     Document Type: Article

References (32)

1. International Technology Roadmap for Semiconductors 2011 - Interconnect.
2. J. Robertson, G. Zhong, S. Hofmann, B.C. Bayer, C.S. Esconjauregui, and H. Telg Use of carbon nanotubes for VLSI interconnects Diamond Relat Mater 18 2009 957 962
3. M.S. Purewal, B.H. Hong, A. Ravi, B. Chandra, J. Hone, and P. Kim Scaling of resistance and electron mean free path of single-walled carbon nanotubes Phys Rev Lett 98 2007 186808-1-4
4. Dijon J, Okuno H, Fayolle M, Vo T, Pontcharra J, Acquaviva D, et al. Ultra-high density carbon nanotube on Al-Cu for advanced vias. In: Electron devices meeting (IEDM) proceeding, San Francisco, USA; 2010. p. 33.4.1-4.
5. A. Javey, J. Guo, Q. Wang, M.S. Lundstrom, and H. Dai Ballistic carbon nanotube field-effect transistors Nature 424 2003 654 657
6. A.D. Franklin, M. Luisier, S.J. Han, G. Tulevski, C.M. Breslin, and L. Gignac Sub-10 nm carbon nanotube transistor Nano Lett 12 2 2012 758 762
7. S.J. Kang, C. Kocabas, T. Ozel, M. Shim, N. Pimparkar, and M.A. Alam High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes Nat Nanotechnol 2 2007 230 236
8. C. Koechlin, S. Maine, R. Haidar, B. Trétout, A. Loiseau, and J.L. Pelouard Electrical characterization of devices based on carbon nanotube films Appl Phys Lett 96 2010 103501 103503
9. Y. Chai, Z. Xiao, and P.C. Chan Horizontally aligned carbon nanotube bundles for interconnect application diameter-dependent contact resistance and mean free path Nanotechnology 21 2010 235705-1-5
10. F. Léonard, and J. Tersoff Role of Fermi-level pinning in nanotube Schottky diodes Phys Rev Lett 84 20 2000 4693 4696
11. J.J. Palacios, A.J. Pérez-Jiménez, E. Louis, E. SanFabian, and J.A. Vergés First-principles phase-coherent transport in metallic nanotubes with realistic contacts Phys Rev Lett 90 10 2003 106801-1-4
12. N. Chiodarelli, S. Masahito, Y. Kashiwagi, Y. Li, K. Arstila, and O. Richard Measuring the electrical resistivity and contact resistance of vertical carbon nanotube bundles for application as interconnects Nanotechnology 22 8 2011 085302 085307
13. N. Chiodarelli, Y. Li, D.J. Cott, S. Mertens, N. Peys, and M. Heyns Integration and electrical characterization of carbon nanotube via interconnects Microelectron Eng 88 2011 837 843
14. M. Katagiri, Y. Yamazaki, M. Wada, M. Kitamura, N. Sakuma, and M. Suzuki Improvement in electrical properties of carbon nanotube via interconnects Jpn J Appl Phys 50 2011 05EF01-1-4
15. 3 for carbon nanotube vertical interconnect and its impact on the electrical properties. In: Mater res soc symp proceeding, Boston, USA; 2010; 1283: p. 46-54.
16. N. Chiodarelli, O. Richard, H. Bender, M. Heyns, S. De Gendt, and G. Groeseneken Correlation between number of walls and diameter in multiwall carbon nanotubes grown by chemical vapor deposition Carbon 50 2012 1748 1752
17. G.K. Reeves, and H.B. Harrison Obtaining the specific contact resistance from transmission line model measurements IEEE Electron Device Lett 3 5 1982 111 113
18. Y. Hayamizu, T. Yamada, K. Mizuno, R.C. Davis, D.N. Futuba, and M. Yumura Integrated three-dimensional microelectromechanical devices from processable carbon nanotube wafers Nat Nanotechnol 3 5 2008 289 294
19. M. Bedewy, E.R. Meshot, H. Guo, E.A. Verploegen, W. Lu, and A.J. Hart Collective mechanism for the evolution and self-termination of vertically aligned carbon nanotube growth J Phys Chem C 113 45 2009 20576 20582
20. P.M. Ryan, A.S. Verhulst, D.J. Cott, A.R. Negreira, T. Hantschel, and J.J. Boland Optimization of multi-walled carbon nanotube-metal contacts by electrical stressing Nanotechnology 21 2010 045705 045706
21. L. Dong, S. Youkey, J. Bush, J. Jiao, V.M. Dubin, and R.V. Chebiam Effects of local Joule heating on the reduction of contact resistance between carbon nanotubes and metal electrodes J Appl Phys 101 2007 024320 024327
22. M. Katagiri, M. Wada, B. Ito, Y. Yamazaki, M. Suzuki, and M. Kitamura Fabrication and characterization of planarized carbon nanotube via interconnects Jpn J Appl Phys 51 2012 05ED02-1-4
23. D.N. Futaba, K. Hata, T. Yamada, T. Hiraoka, Y. Hayamizu, and Y. Kakudate Shape-engineerable and highly densely packed single-walled carbon nanotubes and their application as super-capacitor electrodes Nat Mater 5 2006 987 994
24. T.W. Odom, J.L. Huang, P. Kim, and C.M. Lieber Atomic structure and electronic properties of single-walled carbon nanotubes Nature 391 1998 62 64
25. K. Martens, R. Rooyackers, A. Firrincieli, B. Vincent, R. Loo, and B. De Jaeger Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation Appl Phys Lett 98 2011 013504-1-3
26. R. Rooyackers, B. Vincent, E. Rosseel, E. Simoen, J. Geypen, and H. Bender Study of ohmic contacts to n-type Ge: snowplow and laser activation Appl Phys Lett 99 24 2011 242104-1-3
27. H.L. Leong, C.L. Gan, R.I. Made, C.V. Thompson, K.L. Pey, and H.Y. Li Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects J Appl Phys 105 3 2009 033514 033516
28. A. Schulze, T. Hantschel, A. Dathe, P. Eyben, X. Ke, and W. Vandervorst Electrical tomography using atomic force microscopy and its application towards carbon nanotube-based interconnects Nanotechnology 23 30 2012 305707 305708
29. C. Zeller, G.M.T. Foley, and F.L. Vogel The effect of extrinsic defects in pyrolytic graphite on the a-axis resistivity J Mater Sci 13 5 1978 1114 1118
30. D.E. Soule Magnetic field dependence of the hall effect and magnetoresistance in graphite single crystals Phys Rev 112 3 1958 698 708
31. Y. Zhao, J. Wei, R. Vajtai, P.M. Ajayan, and E.V. Barrera Nat Sci Rep 1 83 2011 1 5
32. Vollebregt S, Ishihara R, Tichelaar F, Van Der Cingel J, Beenakker K. Electrical characterization of carbon nanotube vertical interconnects with different lengths and widths. In: Interconnect technology conference (IITC) San Jose, California, USA; 2012. http://dx.doi.org/10.1109/IITC.2012.6251578.