Experimental characterization and modeling of the contact resistance of Cu-Cu bonded interconnects

Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

  Leong, H L ^a,b   Gan, C L ^a,b   Made, R I ^a,b   Thompson, C V ^b,c   Pey, K L ^b,d   Li, H Y ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c Massachusetts Institute of Technology Cambridge   (United States)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^e INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED LOADS; BONDED INTERFACES; BONDING LAYERS; BONDING LOADS; CU LAYERS; ELECTRICAL CONTACT RESISTANCES; ELECTRICAL MEASUREMENTS; EXPERIMENTAL CHARACTERIZATIONS; SPECIFIC CONTACT RESISTANCES; THERMO-COMPRESSION BONDINGS; TRUE CONTACT AREAS; WAFER LEVELS;

CONTACT RESISTANCE; FRICTION; METAL ANALYSIS; SURFACE PROPERTIES; SURFACE ROUGHNESS; THREE DIMENSIONAL; WAFER BONDING;

COPPER;

EID: 60449094547     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3074503     Document Type: Article

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