Ultra-high density carbon nanotubes on Al-Cu for advanced vias

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Dijon, J ^a   Okuno, H ^a   Fayolle, M ^b   Vo, T ^b   Pontcharra, J ^b   Acquaviva, D ^c   Bouvet, D ^c   Ionescu, A M ^c   Esconjauregui, C S ^e   Capraro, B ^d   Quesnel, E ^a   Robertson, J ^e  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

^c EPFL   (Switzerland)

^d Intel Ireland Ltd   (Ireland)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CU LINES; INTEGRATION SCHEME; NANOTUBE DENSITY; ORDER OF MAGNITUDE; ULTRAHIGH DENSITY;

ALUMINUM; ELECTRON DEVICES;

CARBON NANOTUBES;

EID: 79951820730     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703470     Document Type: Conference Paper

References (12)

1. F Kreupl et al, IEDM (2004) 683
2. Y Awano, et al, IEDM (2009) p10-1
3. K Hata et al, Science 306 1362 (2004)
4. G Zhong, et al, Carbon 44 2009 (2006)
5. J Robertson et al,, App Phys Lett 93 163111 (2008)
6. Y Nihei et al, Jpn J App Phys 44 1626 (2005)
7. Y Yamazaki et al, App Phys Exp 3 05502 (2010)
8. G Steinlesberger et al., EEE Interconnect Tech Conf (2004) 51
9. J Dijon et al, Diamond Rel Mats 19 382 (2010)
10. M. Fayolle et al. Microelectron Eng. (2010), doi:10.1016/j.mee.2010.07. 038
11. DN Futaba et al, Nature Mater. 5 987 (2006).
12. M. Katagiri, et al IEEE IITC p44 (June 2009 Sapporo)