Single electron transistors with ultra-thin Au nanowires as a single Coulomb island

Applied Physics Letters

Volumn 102, Issue 20, 2013, Pages

  Yoshihira, M ^a   Moriyama, S ^b   Guerin, H ^c   Ochi, Y ^a   Kura, H ^d   Ogawa, T ^d   Sato, T ^a   Maki, H ^a  

^a KEIO UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c EPFL   (Switzerland)

^d TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REDUCTION; COULOMB OSCILLATION; FABRICATED DEVICE; FABRICATION PROCESS; GATE VOLTAGES; GOLD NANOWIRE; LOW TEMPERATURES; SOURCE AND DRAIN ELECTRODES;

FABRICATION; NANOWIRES; SINGLE ELECTRON TRANSISTORS;

TRANSPORT PROPERTIES;

EID: 84878345038     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4807806     Document Type: Article

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