Metal-nanoparticle single-electron transistors fabricated using electromigration

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3154-3156

  Bolotin, K I ^a   Kuemmeth, F ^a   Pasupathy, A N ^a   Ralph, D C ^a  

^a Laboratory of Atomic and Solid State Physics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB DIAMONDS; GOLD NANOPARTICLES; SINGLE ELECTRON TRANSISTORS (SET); SOURCE DRAIN BIAS;

ALUMINUM; CAPACITANCE; COULOMB BLOCKADE; ELECTROMIGRATION; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; NANOSTRUCTURED MATERIALS; OXIDATION; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ANALYSIS; SPECTRUM ANALYSIS;

GATES (TRANSISTOR);

EID: 2442471603     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695203     Document Type: Article

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