Ag-mediated charge transport during metal-assisted chemical etching of silicon nanowires

ACS Applied Materials and Interfaces

Volumn 5, Issue 10, 2013, Pages 4302-4308

  Geyer, Nadine ^a   Fuhrmann, Bodo ^b   Leipner, Hartmut S ^b   Werner, Peter ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Ag Ag+ redox mediator; charge transport; etching model; metal assisted chemical etching; porous silicon; silicon nanowires

Indexed keywords

CHARGE TRANSPORT MECHANISMS; ELECTRONIC HOLES; IONIC CONTRIBUTION; METAL-ASSISTED CHEMICAL ETCHING; OXIDATIVE AGENTS; POSITIVE CHARGES; REDOX MEDIATORS; SILICON NANOWIRES;

CHARGE TRANSFER; ELECTROLYTIC POLISHING; ETCHING; INTELLIGENT AGENTS; METALLIC FILMS; METALS; NANOWIRES; POROUS SILICON;

SILICON;

EID: 84878315887     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am400510f     Document Type: Article

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