Deposition rate enhancement in HiPIMS without compromising the ionized fraction of the deposition flux

Journal of Physics D: Applied Physics

Volumn 46, Issue 20, 2013, Pages

  Capek J ^a,b   Hala M ^a   Zabeida, O ^a   Klemberg Sapieha, J E ^a   Martinu, L ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

DC MAGNETRON SPUTTERING; DISCHARGE CHARACTERISTICS; DISCHARGE CURRENTS; HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS); MAGNETIC FIELD STRENGTHS; PARAMAGNETIC SPACERS; PHYSICAL PHENOMENA; TARGET POWER DENSITY;

DEPOSITION RATES; INERT GASES; IONIZATION OF GASES; MAGNETIC FIELDS; MAGNETRON SPUTTERING; PARAMAGNETISM;

DEPOSITION;

EID: 84878218058     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/20/205205     Document Type: Article

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