Understanding deposition rate loss in high power impulse magnetron sputtering: I. Ionization-driven electric fields

Plasma Sources Science and Technology

Volumn 21, Issue 2, 2012, Pages

  Brenning, N ^a   Huo, C ^a   Lundin, D ^b   Raadu, M A ^a   Vitelaru, C ^c,d   Stancu, G D ^c   Minea, T ^c   Helmersson, U ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITÉ PARIS SUD   (France)

^d ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE POWER; CONTROLLABLE PARAMETERS; DIRECT CURRENT MAGNETRON SPUTTERING; EXPERIMENTAL ANALYSIS; HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS); ION TRANSPORTS; MAGNETIC FIELD STRENGTHS; NEGATIVE POTENTIAL; PARAMETER SPACES; PARAMETRIC ANALYSIS; POTENTIAL DROP; POTENTIAL PROFILES; PRESHEATH; PULSE LENGTH; PULSE POWER; SPUTTERED MATERIALS; SWEET SPOT; UNDERLYING MECHANISM; WORKING GAS PRESSURE;

DEPOSITION RATES; ELECTRIC FIELDS; IONIZATION POTENTIAL; MAGNETIC FIELDS; MAGNETRON SPUTTERING; PLASMA SHEATHS;

IONIZATION OF GASES;

EID: 84859609472     PISSN: 09630252     EISSN: 13616595     Source Type: Journal    
DOI: 10.1088/0963-0252/21/2/025005     Document Type: Article

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