High-κ and metal-gate pMOSFETs on GeOI obtained by Ge enrichment: Analysis of ON and OFF performances

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 635-637

  Le Royer, Cyrille ^a   Vincent, B ^a   Clavelier, L ^a   Damlencourt, J F ^a   Tabone, C ^a   Batude, P ^a   Blachier, D ^a   Truche, R ^a   Campidelli, Y ^b   Nguyen, Q T ^c   Cristoloveanu, S ^c   Soliveres, S ^a   Le Carval, G ^a   Boulanger, F ^a   Billon, T ^a   Bensahel, D ^b   Deleonibus, S ^a  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

^c MINATEC   (France)

Author keywords

Germanium (Ge); Hafnium oxide; High dielectric; MOSFET

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY;

DRIVING CURRENT; GERMANIUM-ON-INSULATOR WAFERS; HAFNIUM OXIDE; MOBILITY PEAK;

MOSFET DEVICES;

EID: 44849108868     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.923539     Document Type: Article

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