New mechanism for oxidation of native silicon oxide

Journal of Physical Chemistry C

Volumn 117, Issue 19, 2013, Pages 9819-9825

  Khalilov, U ^a   Pourtois, G ^a,b   Huygh, S ^a   Van Duin, A C T ^c   Neyts, E C ^a   Bogaerts, A ^a  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b IMEC   (Belgium)

^c The Pennsylvania State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NATIVE OXIDE THICKNESS; OXIDATION MECHANISMS; OXIDATION TEMPERATURE; TEMPERATURE DEPENDENT; ULTRATHIN SILICON OXIDE;

GATES (TRANSISTOR); MOS DEVICES; MOSFET DEVICES; OXIDE FILMS; OXYGEN; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; SILICON OXIDES;

OXIDATION;

EID: 84878056507     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp400433u     Document Type: Article

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