Detection of subnanometric layer at the Si/SiO2 interface and related strain measurements

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5574-5576

  Donnadieu, P ^a   Blanquet, E ^a   Jakse, N ^b   Mur, P ^c  

^a UNIV GRENOBLE ALPES   (France)

^b UNIVERSITÉ DE LORRAINE   (France)

^c CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; ELECTRON DIFFRACTION; INTERFACES (MATERIALS); SILICA; SILICON; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

ION BACKSCATTERING; OXIDE LAYERS; STREAK LENGTH; SUBNANOMETRIC LAYERS;

NANOSTRUCTURED MATERIALS;

EID: 12844253247     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1831561     Document Type: Article

References (10)

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