Formation of thin oxide films on room-temperature silicon (100) by exposure to a neutral beam of hyperthermal atomic and molecular oxygen

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 12 PART A, 1998, Pages

  Tagawa, Masahito ^a   Ema, Tatsuhiko ^a   Kinoshita, Hiroshi ^a   Ohmae, Nobuo ^a   Umeno, Masataka ^a   Minton, Timothy K ^b  

^a OSAKA UNIVERSITY   (Japan)

^b MONTANA STATE UNIVERSITY   (United States)

Author keywords

Atomic oxygen; Neutral beam oxidation; Oxidation; Room temperature; Silicon; Silicon dioxide (SiO2)

Indexed keywords

ANNEALING; ATOMIC BEAMS; INTERFACES (MATERIALS); MOLECULAR BEAMS; OXIDATION; OXYGEN; SILICA; STRESSES; THIN FILMS;

NEUTRAL BEAM OXIDATION;

SILICON WAFERS;

EID: 0032304790     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1455     Document Type: Article

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