Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy

Journal of Electron Spectroscopy and Related Phenomena

Volumn 114-116, Issue , 2001, Pages 395-399

  Oh, J H ^a   Nakamura, K ^a   Ono, K ^a   Oshima, M ^a   Hirashita, N ^b   Niwa, M ^b   Toriumi, A ^b   Kakizaki, A ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b STARC   (Japan)

^c INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; INTERFACES (MATERIALS); NUCLEATION; OXIDATION; PHOTOEMISSION; SPECTROSCOPY;

PHOTOEMISSION SPECTROSCOPY;

SILICON;

EID: 0035278009     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0368-2048(00)00367-4     Document Type: Article

References (15)

1. Muller D.A., Sorsch T., Moccio S., Baumann F.H., Evans-Lutterodt K., Timp G. Nature. 399:1999;758.
2. Hasegawa E., Ishitani A., Akimoto K., Tsukiji M., Ohta N. J. Electrochem. Soc. 124:1995;273.
3. Dujardin G., Mayne A., Comtet G., Hellner L., Jamet M., Le Goff E., Millet P. Phys. Rev. Lett. 76:1996;3782.
4. Uchiyama T., Tsukada M. Phys. Rev. B. 53:1996;6084.
5. Watanabe H., Kato K., Uda T., Fujita K., Ichikawa M. Phys. Rev. Lett. 80:1998;345.
6. Himpsel F.J., McFeely F.R., Taleb-Ibrahimi A., Yarmoff A., Hollinger G. Phys. Rev. B. 38:1988;6084.
7. Aiba T., Yamauchi K., Shimizu Y., Tate N. Jpn. J. Appl. Phys. 34:1995;707.
8. Luh D.-A., Miller T., Chiang T.-C. Phys. Rev. Lett. 79:1997;3014.
9. Luh D.-A., Miller T., Chiang T.-C. Phys. Rev. B. 57:1998;6294.
10. Uhrberg R.I.G., Landermark E., Chao Y.-C. J. Electron Spectrosc. Relat. Phenom. 75:1995;197.
11. Yeom H.W., Hamamatsu H., Ohta T., Uhrberg R.I.G. Phys. Rev. B. 59:1999;413.
12. Enta Y., Miyanishi Y., Irimachi H., Niwano M., Suemitsu M. Phys. Rev. B. 57:1998;6294.
13. Miyata N., Watanabe H., Ichikawa M. Phys. Rev. B. 58:1998;670.
14. Uchiyama T., Tsukada M. Phys. Rev. B. 55:1997;9356.
15. Kato K., Uda T., Terakura K. Phys. Rev. Lett. 80:1998;2000.