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Volumn 112, Issue 3, 2012, Pages

Analysis of statistical compositional alloy fluctuations in InGaN from aberration corrected transmission electron microscopy image series

(5) Schulz, T a Remmele, T a Markurt, T a Korytov, M a Albrecht, M a

a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATION-CORRECTED; AMORPHOUS SURFACE LAYERS; ATOMIC RADIUS; COMPOSITIONAL ALLOYS; IMAGE SIMULATIONS; IMAGING CONDITIONS; INGAN ALLOY; LOCAL STRAINS; LOCAL VARIATIONS; OUT-OF PLANE; RANDOM ALLOY; SEMI-CONDUCTOR ALLOYS; TRANSMISSION ELECTRON MICROSCOPY IMAGES; UNIT CELLS;

GALLIUM; GALLIUM COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM;

GALLIUM ALLOYS;

EID: 84865213040 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4742015 Document Type: Article

Times cited : (35)

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