Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy

Microscopy and Microanalysis

Volumn 18, Issue 5, 2012, Pages 1143-1154

  Eljarrat, A ^a   Estrade S ^a   Gacevic Z ^b   Fernandez Garrido S ^b,d   Calleja, E ^b   Magen C ^c   Peiro F ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c UNIVERSITY OF ZARAGOZA   (Spain)

^d PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

band gap; III V nitrides; Kramers Kronig analysis; optical properties; VEELS

Indexed keywords

EID: 84868591142     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927612001328     Document Type: Article

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