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Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

A nondamaging electron microscopy approach to map in distribution in InGaN light-emitting diodes

(3) Ozdol V B a Koch, C T a Van Aken, P A a

a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; DARK-FIELD; ELECTRON DOSE; GREEN LIGHT; HIGH EFFICIENCY; IN-LINE ELECTRON HOLOGRAPHY; IN-LINE HOLOGRAPHY; INDUCED DAMAGE; LARGE FIELD OF VIEWS; MULTIQUANTUM WELLS; NANO-METER SCALE; RANDOM ALLOY; SPATIAL RESOLUTION;

ELECTRON BEAMS; ELECTRON HOLOGRAPHY; ELECTRON MICROSCOPY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; INDIUM ALLOYS; LIGHT EMISSION; LIGHT EMITTING DIODES;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77956870054 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3476285 Document Type: Article

Times cited : (28)

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