Post-annealing properties of aluminum-doped zinc oxide films fabricated by ion beam co-sputtering

Vacuum

Volumn 87, Issue , 2013, Pages 227-231

  Chen, Yu Yun ^a   Wang, Paul W ^b   Hsu, Jin Cherng ^a   Lee, Chun Yi ^a  

^a FU JEN CATHOLIC UNIVERSITY   (Taiwan)

^b BRADLEY UNIVERSITY   (United States)

Author keywords

Aluminum doped zinc oxide; Hall effect; Ion beam co sputtering; Post annealing; Residual stress; Van der Pauw method

Indexed keywords

ALUMINUM; ALUMINUM COATINGS; ANNEALING; ENERGY GAP; HALL EFFECT; ION BEAMS; IONS; METALLIC COMPOUNDS; OPTICAL FILMS; RESIDUAL STRESSES; ZINC; ZINC OXIDE;

ALUMINUM DOPED ZINC OXIDE FILMS; ALUMINUM-DOPED ZINC OXIDE; ANNEALING TEMPERATURES; COSPUTTERING; ION BEAM SPUTTER DEPOSITION; POST ANNEALING; STRUCTURAL AND ELECTRICAL PROPERTIES; VAN DER PAUW METHOD;

OXIDE FILMS;

EID: 84877949339     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.02.054     Document Type: Article

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