Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

Vacuum

Volumn 84, Issue 11, 2010, Pages 1280-1286

  Zhu, B L ^a   Zhao, X Z ^b   Su, F H ^c   Li, G H ^c   Wu, X G ^c   Wu, J ^a   Wu, R ^a  

^a WUHAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b WUHAN UNIVERSITY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Annealing treatment; Photoluminescence (PL); Pulsed laser deposition (PLD); ZnO

Indexed keywords

ADSORBED OXYGEN; ANNEALING TEMPERATURES; ANNEALING TREATMENTS; C-AXIS ORIENTATIONS; GENERAL TRENDS; GLASS SUBSTRATES; GRAIN SIZE; LOW TEMPERATURE ANNEALING; PL MEASUREMENTS; ROOM TEMPERATURE; SEM; STOICHIOMETRIC RATIO; SUBSTRATE TEMPERATURE; TRANSMITTANCE SPECTRA; UV EMISSIONS; XRD; ZNO; ZNO FILMS; ZNO THIN FILM;

ANNEALING; DEPOSITION; GLASS; GLASS LASERS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; METALLIC FILMS; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; PULSED LASERS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

OPTICAL FILMS;

EID: 77957852917     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.01.059     Document Type: Article

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