메뉴 건너뛰기




Volumn 21, Issue , 2012, Pages 14-23

Review on screen printed metallization on p-type silicon

Author keywords

Contact formation; Crystalline silicon; Local contact; P type; Screen printing; Solar cell

Indexed keywords


EID: 84877933022     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2012.05.003     Document Type: Conference Paper
Times cited : (40)

References (62)
  • 2
    • 84875610177 scopus 로고    scopus 로고
    • 19.4%-Efficient large area rear-passivated screen- printed silicon solar cells
    • Hamburg
    • Dullweber T, Gatz S, Hannebauer H, Falcon T, Hesse R, Schmidt J et al. 19.4%-efficient large area rear-passivated screen- printed silicon solar cells. Proc. 26th EUPVSEC Hamburg 2011, 811-816.
    • (2011) th EUPVSEC , pp. 811-816
    • Dullweber, T.1    Gatz, S.2    Hannebauer, H.3    Falcon, T.4    Hesse, R.5    Schmidt, J.6
  • 5
    • 65549165435 scopus 로고    scopus 로고
    • Above 17% industrial type PERC solar cell on thin multi- crystalline silicon substrate
    • Choulat P, Agostinelli G, Ma Y, Duerinckx F, Beaucarne G. Above 17% industrial type PERC solar cell on thin multi- crystalline silicon substrate. Proc. 22nd EU PVSEC Milan 2007, 1011-1014.
    • (2007) nd EU PVSEC Milan , pp. 1011-1014
    • Choulat, P.1    Agostinelli, G.2    Ma, Y.3    Duerinckx, F.4    Beaucarne, G.5
  • 6
    • 84859522317 scopus 로고    scopus 로고
    • Local contact structures for industrial PERC-type solar cells
    • Barcelona
    • Agostinelli G, Szlufcick J, Choulat P, Beaucarne G. Local contact structures for industrial PERC-type solar cells. Proc. 20th EU PVSEC Barcelona 2005, 942-945.
    • (2005) th EU PVSEC , pp. 942-945
    • Agostinelli, G.1    Szlufcick, J.2    Choulat, P.3    Beaucarne, G.4
  • 7
    • 78650090586 scopus 로고    scopus 로고
    • Enabling dielectric rear side passivation for industrial mass production by developing lean printing-based solar cell processes
    • Honolulu
    • Lauermann T, Luder T, Scholz S, Raabe B, Hahn G, Terheiden B. Enabling dielectric rear side passivation for industrial mass production by developing lean printing-based solar cell processes. Proc. 35thIEEEPVSCHonolulu 2010, 28-33.
    • (2010) Proc. 35thIEEEPVSC , pp. 28-33
    • Lauermann, T.1    Luder, T.2    Scholz, S.3    Raabe, B.4    Hahn, G.5    Terheiden, B.6
  • 10
    • 84897049042 scopus 로고    scopus 로고
    • Bifacial solar cells with boron back surface field
    • Valencia
    • Duran C, Buck T, Kopecek R, Libal J, Traverso F. Bifacial solar cells with boron back surface field. Proc. 25th EU PVSEC Valencia 2010, 2348-2352.
    • (2010) thEU PVSEC , pp. 2348-2352
    • Duran, C.1    Buck, T.2    Kopecek, R.3    Libal, J.4    Traverso, F.5
  • 12
    • 84897038471 scopus 로고    scopus 로고
    • Comparison of the passivation quality of boron and aluminum BSF for wafers of varying thickness
    • Hamburg
    • Riegel S, Gloger S, Raabe B, Hahn G. Comparison of the passivation quality of boron and Aluminum BSF for wafers of varying thickness. Proc. 24th EU PVSEC Hamburg 2009, 1596-1599.
    • (2009) Proc. 24th EU PVSEC , pp. 1596-1599
    • Riegel, S.1    Gloger, S.2    Raabe, B.3    Hahn, G.4
  • 13
    • 80052103254 scopus 로고    scopus 로고
    • High efficiency bifacial solar cell developed on monocrystalline si and transferred to multicrystalline si
    • Auriac N, Grange B, Cabal R, Maris-Froelicha A, Ribeyron PJ. High efficiency bifacial solar cell developed on monocrystalline Si and transferred to multicrystalline Si. Energy Procedia 2011;8:427-434.
    • (2011) Energy Procedia , vol.8 , pp. 427-434
    • Auriac, N.1    Grange, B.2    Cabal, R.3    Maris-Froelicha, A.4    Ribeyron, P.J.5
  • 15
    • 80052099629 scopus 로고    scopus 로고
    • Towards industrial N-type PERT silicon solar cells: Rear passivation and metallization scheme
    • Richter A, Benick J, Kalio A, Seiffe J, Horteis M, Hermle M et al. Towards industrial n-type PERT silicon solar cells: rear passivation and metallization scheme. Energy Procedia 2011;8:479-468.
    • (2011) Energy Procedia , vol.8 , pp. 468-479
    • Richter, A.1    Benick, J.2    Kalio, A.3    Seiffe, J.4    Horteis, M.5    Hermle, M.6
  • 16
    • 80052081373 scopus 로고    scopus 로고
    • Influence of the front surface passivation quality on large area n- Type solar cells with alalloyed rear emitter
    • Book F, Wiedenmann T, Schubert G, Plagwitz H, Hahn G. Influence of the front surface passivation quality on large area n- Type solar cells with Alalloyed rear emitter. Energy Procedia 2011;8:487-492.
    • (2011) Energy Procedia , vol.8 , pp. 487-492
    • Book, F.1    Wiedenmann, T.2    Schubert, G.3    Plagwitz, H.4    Hahn, G.5
  • 18
    • 77953026429 scopus 로고    scopus 로고
    • Screen-printed aluminum-alloyed p+ emitter on high-efficiency n-type interdigitated back-contact silicon solar cells
    • Gong C, Van Kerschaver E, Robbelein J, Janssens T, Posthuma N, Poortmans J et al. Screen-printed aluminum-alloyed p+ emitter on high-efficiency n-type interdigitated back-contact silicon solar cells. Electron Device Letters 2010;31:576-578.
    • (2010) Electron Device Letters , vol.31 , pp. 576-578
    • Gong, C.1    Van Kerschaver, E.2    Robbelein, J.3    Janssens, T.4    Posthuma, N.5    Poortmans, J.6
  • 19
    • 80052084952 scopus 로고    scopus 로고
    • Large Area n-type multicrystalline silicon solar cells with B-emitter: Efficiencies exceeding 14%
    • Shanghai
    • Kopecek R, Buck T, Libal J, Petres R, Rover I, Wambach K et al. Large area n-type multicrystalline silicon solar cells with B-emitter: efficiencies exceeding 14%. Proc.15th IPSEC, Shanghai 2005.
    • (2005) Proc.15th IPSEC
    • Kopecek, R.1    Buck, T.2    Libal, J.3    Petres, R.4    Rover, I.5    Wambach, K.6
  • 21
    • 84865154491 scopus 로고    scopus 로고
    • Investigation of aluminum-alloyed local contacts for rear surface-passivated silicon solar cells
    • Rauer M, Schmiga C, Woehl R, Ruhle K, Hermle M, Horteis M et al. Investigation of aluminum-alloyed local contacts for rear surface-passivated silicon solar cells. IEEE J Photovolt 2011;1:22-28.
    • (2011) IEEE J Photovolt , vol.1 , pp. 22-28
    • Rauer, M.1    Schmiga, C.2    Woehl, R.3    Ruhle, K.4    Hermle, M.5    Horteis, M.6
  • 22
    • 84897106292 scopus 로고    scopus 로고
    • Metallization of rear-side passivated solar cells: Reducing cavities on local contacts
    • Hamburg
    • Fang T, Lin C-M, Wang L-T, Tang W-C. Metallization of rear-side passivated solar cells: reducing cavities on local contacts. Proc. 26th EU PVSEC Hamburg 2011, 2220-2222.
    • (2011) Proc. 26th EU PVSEC , pp. 2220-2222
    • Fang, T.1    Lin, C.-M.2    Wang, L.-T.3    Tang, W.-C.4
  • 23
    • 84897082245 scopus 로고    scopus 로고
    • Differences of rear-contact formation between laser ablation and etching paste for PERC solar cells
    • Hamburg
    • Bahr M, Heinrich G, Doll O, Kohler I, Maier C, Lawerenz A. Differences of rear-contact formation between laser ablation and etching paste for PERC solar cells. Proc. 26th EU PVSEC Hamburg 2011, 1203-1209.
    • (2011) th EU PVSEC , pp. 1203-1209
    • Bahr, M.1    Heinrich, G.2    Doll, O.3    Kohler, I.4    Maier, C.5    Lawerenz, A.6
  • 24
    • 84869459035 scopus 로고    scopus 로고
    • Influence of the contact geometry and sub-contact passivation on the performance of screen printed auo3 passivated solar cells
    • Hamburg
    • Lauermann T, Zuschlag A, Scholz S, Hahn G, Terheiden B. Influence of the contact geometry and sub-contact passivation on the performance of screen printed AUO3 passivated solar cells. Proc. 26th EU PVSEC Hamburg 2011, 1137-1143.
    • (2011) thEU PVSEC , pp. 1137-1143
    • Lauermann, T.1    Zuschlag, A.2    Scholz, S.3    Hahn, G.4    Terheiden, B.5
  • 26
    • 77954181451 scopus 로고    scopus 로고
    • Al-si alloy formation in narrow P-type Si contact areas for rear passivated solar cells
    • Urrejola E, Peter K, Plagwitz H, Schubert G. Al-Si alloy formation in narrow p-type Si contact areas for rear passivated solar cells. J Appl Phys 2010;107:124519.
    • (2010) J Appl Phys , vol.107 , pp. 124519
    • Urrejola, E.1    Peter, K.2    Plagwitz, H.3    Schubert, G.4
  • 27
    • 79954583092 scopus 로고    scopus 로고
    • Silicon diffusion in aluminum for rear passivated solar cells
    • Urrejola E, Peter K, Plagwitz H, Schubert G. Silicon Diffusion in Aluminum for Rear Passivated Solar Cells. Appl Phys Lett 2011;98 :153508.
    • (2011) Appl Phys Lett , vol.98 , pp. 153508
    • Urrejola, E.1    Peter, K.2    Plagwitz, H.3    Schubert, G.4
  • 28
    • 80052087355 scopus 로고    scopus 로고
    • Distribution of silicon in the aluminum matrix for rear passivated solar cells
    • Urrejola E, Peter K, Plagwitz H, Schubert G. Distribution of silicon in the aluminum matrix for rear passivated solar cells. Energy Procedia 2011;8:331-6.
    • (2011) Energy Procedia , vol.8 , pp. 331-336
    • Urrejola, E.1    Peter, K.2    Plagwitz, H.3    Schubert, G.4
  • 29
    • 80052927500 scopus 로고    scopus 로고
    • Effect of gravity on the microstructure of Al-Si alloy for rear-passivated solar cells
    • Urrejola E, Peter K, Plagwitz H, Schubert G. Effect of gravity on the microstructure of Al-Si alloy for rear-passivated solar cells. J Appl Phys 2011;110:056104.
    • (2011) J Appl Phys , vol.110 , pp. 056104
    • Urrejola, E.1    Peter, K.2    Plagwitz, H.3    Schubert, G.4
  • 30
    • 79958155149 scopus 로고    scopus 로고
    • Characterisation of local AL-BSF formation for perc solar cell structures
    • Valencia
    • Grasso FS, Gautero L, Rentsch J, Preu R Lanzafame R. Characterisation of local Al-BSF formation for PERC solar cell structures. Proc 25th EUPVSEC Valencia 2010, 371-374.
    • (2010) thEUPVSEC , pp. 371-374
    • Grasso, F.S.1    Gautero, L.2    Rentsch, J.3    Preu, R.L.R.4
  • 31
    • 74049141997 scopus 로고    scopus 로고
    • Development of screen printable contacts for p+ emitters in bifacial solar cells
    • Dresden
    • Kerp H, Kim S, Lago R, Recart F, Freire I, Perez L et al. Development of screen printable contacts for p+ emitters in bifacial solar cells. Proc. 21st EU PVSEC Dresden 2006; 892-4.
    • (2006) Proc. 21st EU PVSEC , pp. 892-894
    • Kerp, H.1    Kim, S.2    Lago, R.3    Recart, F.4    Freire, I.5    Perez, L.6
  • 32
    • 80052079460 scopus 로고    scopus 로고
    • Contact formation in the silver/aluminum thick film firing process - A phenomenological approach
    • Riegel S, Mutter F, Hahn G, Terheiden B. Contact formation in the silver/aluminum thick film firing process - A phenomenological approach. Proc. 25th EU PVSEC Valencia 2010, 2353-2356.
    • (2010) Proc. 25th EU PVSEC Valencia , pp. 2353-2356
    • Riegel, S.1    Mutter, F.2    Hahn, G.3    Terheiden, B.4
  • 34
    • 80052094733 scopus 로고    scopus 로고
    • Influence of the dopant on the contact formation to p+-type silicon
    • Riegel S, Mutter F, Hahn G, Terheiden B. Influence of the dopant on the contact formation to p+-type silicon. Energy Procedia 2011;8:533-539.
    • (2011) Energy Procedia , vol.8 , pp. 533-539
    • Riegel, S.1    Mutter, F.2    Hahn, G.3    Terheiden, B.4
  • 35
    • 78650130148 scopus 로고    scopus 로고
    • Screen printable Ag-Al metal pastes for p+ silicon application in solar cells
    • Honolulu
    • Seyedmohammadi S, Graddy E, Shaik A. Screen printable Ag-Al metal pastes for p+ silicon application in solar cells. Proc. 35thIEEE PVSC Honolulu 2010, 003600-003603.
    • (2010) Proc. 35thIEEE PVSC , pp. 003600-003603
    • Seyedmohammadi, S.1    Graddy, E.2    Shaik, A.3
  • 36
    • 0040028982 scopus 로고    scopus 로고
    • Minority carrier lifetime degradation in boron-doped czochralski silicon
    • Glunz SW, Rein S, Lee JY, Warta W. Minority carrier lifetime degradation in boron-doped Czochralski silicon. J. Appl. Phys. 2001;90:2397-2404.
    • (2001) J. Appl. Phys. , vol.90 , pp. 2397-2404
    • Glunz, S.W.1    Rein, S.2    Lee, J.Y.3    Warta, W.4
  • 37
    • 10044269932 scopus 로고    scopus 로고
    • Recombination activity of interstitial iron and other transition metal point defects in p- And n- Type crystalline silicon
    • D. Macdonald, Geerlings JL. Recombination activity of interstitial iron and other transition metal point defects in p- And n- Type crystalline silicon. Appl. Phys. Lett. 2004;85:4061-4063.
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 4061-4063
    • Geerlings, J.L.1    MacDonald, D.2
  • 38
    • 0242548774 scopus 로고
    • The diffusion of copper, magnesium, manganese and silicone in aluminium
    • Buckle H. The Diffusion of Copper, Magnesium, Manganese and Silicone in Aluminium. ZeitschriftfurElektrochem 1943;49:238-42.
    • (1943) ZeitschriftfurElektrochem , vol.49 , pp. 238-242
    • Buckle, H.1
  • 39
    • 0014736268 scopus 로고
    • Characteristics of aluminum-silicon schottky barrier diode
    • Yu AYC, Mead CA. Characteristics of Aluminum-Silicon Schottky Barrier Diode. Solid State Electronics 1970;13:97-104.
    • (1970) Solid State Electronics , vol.13 , pp. 97-104
    • Yu, A.Y.C.1    Mead, C.A.2
  • 40
    • 3342906170 scopus 로고
    • Diffusivity and solubility of si in the al metallization of integrated circuits
    • McCaldin JO, Sankur H. Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits. Appl Phys Lett 1971;19:524-7.
    • (1971) Appl Phys Lett , vol.19 , pp. 524-527
    • McCaldin, J.O.1    Sankur, H.2
  • 41
    • 14744295961 scopus 로고
    • Precipitation of si from the al metallization of integrated circuits
    • McCaldin JO, Sankur H. Precipitation of Si from the Al Metallization of Integrated Circuits. Appl Phys Lett 1972;20:171-2.
    • (1972) Appl Phys Lett , vol.20 , pp. 171-172
    • McCaldin, J.O.1    Sankur, H.2
  • 42
    • 0015626146 scopus 로고
    • Diffusion-limited si precipitation in evaporated Al/Si films
    • van Gurp GJ. Diffusion-limited Si precipitation in evaporated Al/Si films. JAppl Phys 1973;44:2040-50.
    • (1973) JAppl Phys , vol.44 , pp. 2040-2050
    • Van, G.G.J.1
  • 43
    • 5944249337 scopus 로고
    • Behavior of Al - Si schottky barrier diodes under heat treatment
    • Chino K. Behavior of Al - Si Schottky barrier diodes under heat treatment. Solid State Electronics 1973;16:119-120.
    • (1973) Solid State Electronics , vol.16 , pp. 119-120
    • Chino, K.1
  • 44
    • 0016486257 scopus 로고
    • The nature of barrier height variations in alloyed Al-Si schottky barrier diodes
    • Basterfield J, Shannon JM, Gill A. The nature of barrier height variations in alloyed Al-Si Schottky barrier diodes. Solid State Electronics 1975;18:290-1.
    • (1975) Solid State Electronics , vol.18 , pp. 290-291
    • Basterfield, J.1    Shannon, J.M.2    Gill, A.3
  • 45
    • 0018983241 scopus 로고
    • Accelerated aging of Al/Ge and Al/Si thin film couples
    • Mgbenu EN. Accelerated aging of Al/Ge and Al/Si thin film couples. Thin Solid Films 1980;65:267-74.
    • (1980) Thin Solid Films , vol.65 , pp. 267-274
    • Mgbenu, E.N.1
  • 46
    • 0021371024 scopus 로고
    • Diffusion of silicon in aluminum-rich alloy thin films
    • Garg N, Castleman LS, D'Antonio CD. Diffusion of silicon in aluminum-rich alloy thin films. Thin Solid Films 1984;112:317-28.
    • (1984) Thin Solid Films , vol.112 , pp. 317-328
    • Garg, N.1    Castleman, L.S.2    D'Antonio, C.D.3
  • 49
    • 77952692024 scopus 로고    scopus 로고
    • Investigation of the alloying process of screen printed aluminum pastes for the BSF formation on silicon solar cells
    • Huster F. Investigation of the alloying process of screen printed aluminum pastes for the BSF formation on silicon solar cells. Proc. 20th EU PVSEC Barcelona 2005, 1466-9.
    • (2005) Proc. 20th EU PVSEC Barcelona , pp. 1466-1469
    • Huster, F.1
  • 52
    • 50849122680 scopus 로고    scopus 로고
    • Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces
    • Bock R, Schmidt J, Brendel R, Schuhmann H, Seibt M. Electron microscopy analysis of crystalline silicon islands formed on screen-printed aluminum-doped p-type silicon surfaces. J Appl Phys 2008;104:043701.
    • (2008) J Appl Phys , vol.104 , pp. 043701
    • Bock, R.1    Schmidt, J.2    Brendel, R.3    Schuhmann, H.4    Seibt, M.5
  • 53
    • 0032664043 scopus 로고    scopus 로고
    • An optimized rapid aluminum back surface field technique for silicon solar cells
    • Narashima S, Rohatgi A, Weeber AW. An optimized rapid aluminum back surface field technique for silicon solar cells. IEEE Transactions on Electron Devices 1999;46:1363-1369.
    • (1999) IEEE Transactions on Electron Devices , vol.46 , pp. 1363-1369
    • Narashima, S.1    Rohatgi, A.2    Weeber, A.W.3
  • 54
    • 0033340775 scopus 로고    scopus 로고
    • Understanding and implementation of rapid thermal technologies for high- efficiency silicon solar cells
    • Rohatgi A, Narashima S, Ebong AU, Doshi P. Understanding and implementation of rapid thermal technologies for high- efficiency silicon solar cells. IEEE Transactions on Electron Devices 1999;46:1970-1977.
    • (1999) IEEE Transactions on Electron Devices , vol.46 , pp. 1970-1977
    • Rohatgi, A.1    Narashima, S.2    Ebong, A.U.3    Doshi, P.4
  • 58
    • 84857623464 scopus 로고    scopus 로고
    • Modeling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum
    • DOI 10.1002/pssr.201105611
    • Muller J, Bothe K, Gatz S, Brendel R. Modeling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum. Phys Status Solidi RRL 2012; DOI 10.1002/pssr. 201105611.
    • (2012) Phys Status Solidi RRL
    • Muller, J.1    Bothe, K.2    Gatz, S.3    Brendel, R.4
  • 62
    • 79961178004 scopus 로고    scopus 로고
    • Structural and electronic properties of silver/silicon interfaces and implications for solar cell performance
    • Butler K, Vullum PE, Muggerud AM, Cabrera E, Harding JH. Structural and electronic properties of silver/silicon interfaces and implications for solar cell performance. Phys Rev B 2011;83:235307.
    • (2011) Phys Rev B , vol.83 , pp. 235307
    • Butler, K.1    Vullum, P.E.2    Muggerud, A.M.3    Cabrera, E.4    Harding, J.H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.