Understanding and implementation of rapid thermal technologies for high-efficiency silicon solar cells

IEEE Transactions on Electron Devices

Volumn 46, Issue 10, 1999, Pages 1970-1977

  Rohatgi, Ajeet ^a   Narasimha, Shreesh ^a   Ebong, Abasifreke U ^a   Doshi, Parag ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CRYSTALLINE MATERIALS; CURRENT DENSITY; DIFFUSION; ELECTRIC CONTACTS; ELECTRIC LAMPS; PASSIVATION; PHOTOVOLTAIC CELLS; RAPID THERMAL ANNEALING; SCREEN PRINTING; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE;

BACK SURFACE FIELD; MONOCRYSTALLINE; PLASMA SILICON NITRIDE FILM; RAPID EMITTER FORMATION; SCREEN PRINTED CONTACTS; TUNGSTEN HALOGEN LAMPS;

SILICON SOLAR CELLS;

EID: 0033340775     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.791984     Document Type: Article

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