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Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

Al-Si alloy formation in narrow p-type Si contact areas for rear passivated solar cells

(4) Urrejola, Elias a Peter, Kristian a Plagwitz, Heiko b Schubert, Gunnar b

a International Solar Energy Research Center ISC Konstanz (Germany)

b Sunways AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AL-SI ALLOY; ALLOYING PROCESS; CONTACT AREAS; CONTACT FORMATION; CONTACT RESISTIVITIES; CONTACT STRUCTURE; DEVICE STRUCTURES; DIELECTRIC LAYER; FILL FACTOR; HIGH EFFICIENCY; P-TYPE SI; REAR SIDE; REAR SURFACES; SCANNING ELECTRONS; SCREEN-PRINTED;

OPEN CIRCUIT VOLTAGE; OPTICAL PROPERTIES; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SILICON; SILICON ALLOYS; SOLAR CELLS; SWITCHING CIRCUITS;

ALUMINUM;

EID: 77954181451 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3437070 Document Type: Article

Times cited : (56)

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