An optimized rapid aluminum back surface field technique for silicon solar cells

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1363-1370

  Narasimha, Shreesh ^b,c   Rohatgi, Ajeet ^a,b   Weeber, A W ^d  

^a IEEE

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IBM   (United States)

^d TNO   (Netherlands)

Author keywords

Aluminum; Back surface field; Photovoltaic cell doping; Photovoltaic cell fabrication; Rapid thermal processing

Indexed keywords

ALLOYING; ALUMINUM; PHOTOVOLTAIC CELLS; RAPID THERMAL ANNEALING; SCREEN PRINTING; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BACK SURFACE FIELD (BSF) TECHNIQUE;

SILICON SOLAR CELLS;

EID: 0032664043     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772477     Document Type: Article

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