Influence of the dopant on the contact formation to p+-type silicon

Energy Procedia

Volumn 8, Issue , 2011, Pages 533-539

  Riegel, S ^a   Mutter, F ^a   Hahn, G ^a   Terheiden, B ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

Ag based paste; Contact formation; Screen printing

Indexed keywords

ALUMINUM; CONTACT RESISTANCE; CRYSTALLITES; DOPING (ADDITIVES); INTERFACES (MATERIALS); SCREEN PRINTING; SEMICONDUCTOR DOPING; SILICON; SILICON WAFERS; THICK FILMS;

AG THICK FILM; CONTACT AREAS; CONTACT FORMATION; CONTACT INTERFACE; CONTACT SPOTS; DOPED LAYERS; DOPING ELEMENTS; IMPURITY CONCENTRATION;

SILVER;

EID: 80052094733     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.178     Document Type: Conference Paper

References (10)

1. Lago R, Pérez L, Kerp H, Freire I, Hoces I, Azkona N. Screen printing metallization of boron emitters. Prog Photovolt Res Appl 2010;18:20-7.
2. th EU PVSEC/WCPEC-5, Valencia 2010; 2353-6.
3. st EU PVSEC, Dresden 2006; 892-4.
4. Schubert G, Thick film metallization of crystalline silicon solar cells: mechanisms, models and applications. PhD thesis, University of Konstanz, 2006.
5. th IPSEC, Shanghai 2005.
6. nd Workshop on Metallization, Konstanz, Germany 2010.
7. Pysch D, Mette A, Filipovic A, Glunz SW. Comprehensive analysis of advanced solar cell contacts consisting of fine-line seed layers thickened by silver plating. Progr Photovolt Res Appl 2009;17:101-14.
8. Mette A. New concepts for front side metallization of industrial silicon solar cells. PhD thesis, Albert-Ludwigs-Universität Freiburg, 2007.
9. th EU PVSEC, Barcelona 2005; 1446-9.
10. th EU PVSEC, Hamburg 2009; 1167-70.