Modeling the formation of local highly aluminum-doped silicon regions by rapid thermal annealing of screen-printed aluminum

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 3, 2012, Pages 111-113

  Müller, Jens ^a   Bothe, Karsten ^a   Gatz, Sebastian ^a   Brendel, Rolf ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

Annealing; Doping; Metal semiconductor contacts; Silicon; Solar cells

Indexed keywords

ANALYTICAL MODELING; CONTACT GEOMETRY; DISSOLUTION RATES; ELEMENTARY DIFFERENTIALS; EQUILIBRIUM CONCENTRATION; FIRING PROCESS; LAYER THICKNESS; LINE CONTACT; METAL-SEMICONDUCTOR CONTACTS; PROCESS DYNAMICS; SCREEN-PRINTED; SILICON CONCENTRATION; SOLID SILICON; TEMPERATURE PROFILES; TIME-DEPENDENT;

ANNEALING; DIFFERENTIAL EQUATIONS; DOPING (ADDITIVES); RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICON; SOLAR CELLS;

ALUMINUM;

EID: 84857623464     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105611     Document Type: Article

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