Influence of the front surface passivation quality on large area n-type silicon solar cells with Al-alloyed rear emitter

Energy Procedia

Volumn 8, Issue , 2011, Pages 487-492

  Book, F ^a   Wiedenmann, T ^a   Schubert, G ^b   Plagwitz, H ^b   Hahn, G ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

^b Sunways AG   (Germany)

Author keywords

Al emitter; n type; Selective

Indexed keywords

ALUMINUM; ALUMINUM ALLOYS; EFFICIENCY; PASSIVATION; SEMICONDUCTING SILICON; SILICON; SILICON NITRIDE; SILICON OXIDES; SOLAR CELLS;

CELL EFFICIENCY; PASSIVATION LAYER; PC1D SIMULATIONS; PROCESSING EQUIPMENT; SCREEN-PRINTED; SELECTIVE; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES;

SILICON SOLAR CELLS;

EID: 80052081373     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.170     Document Type: Conference Paper

References (13)

1. Glunz SW, Rein S, Lee JY, Warta W. Minority Carrier Lifetime Degradation in Boron-Doped Czochralski Silicon. J Appl Phys 2001;90:2397-404. (Pubitemid 33600658)
2. Macdonald D, Geerligs LJ. Recombination Activity of Interstitial Iron and Other Transition Metal Point Defects in p- and n- Type Crystalline Silicon. Appl Phys Lett 2004;85:4061-3.
3. Meier DL, Davis HP, Garcia RA, Salami J, Rohatgi A, Ebong A et al. Aluminum Alloy Back p-n Junction Dendritic Web Silicon Solar Cell. Solar Energy Materials and Solar Cells 2001;65:621-7.
4. th EU PVSEC, Paris 2004, p. 1255-8.
5. nd EU PVSEC, Milan 2007, p. 837-40.
6. th EU PVSEC, Valencia 2010, p. 2381-6.
7. th EU PVSEC, Valencia 2010, p. 1163-8.
8. th EU PVSEC, Valencia 2010, p. 2265-7.
9. th IEEE PVSC, Honolulu 2010, p. 3531-5.
10. th EU PVSEC, Valencia 2010, p. 1465-8.
11. th IEEE PVSC, Anaheim, 1997, p. 207-10.
12. th EU PVSEC, Valencia 2010, p. 2280-6.
13. Hermle M, Granek F, Schultz O, Glunz SW. Analyzing The Effects of Front-Surface Fields on Back-junction Silicon Solar Cells Using the Charge-collection Probability and the Reciprocity Theorem. J Appl Phys 2008;103:054507.