Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films

Applied Physics Letters

Volumn 100, Issue 8, 2012, Pages

  Hurni, Christophe A ^a   Choi, Soojeong ^a   Bierwagen, Oliver ^b   Speck, James S ^a  

^a University of California   (United States)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLING RESISTANCE; ELECTRON MASS; HALL MEASUREMENTS; III-NITRIDE; INDIUM NITRIDE; N-TYPE CONDUCTIVITY; P-TYPE; SHOW THROUGH; SMALL BANDGAP; SURFACE ACCUMULATION; SURFACE ELECTRON ACCUMULATION; TRANSMISSION LINE MODELS;

PHYSICAL PROPERTIES; PHYSICS;

NITRIDES;

EID: 84863230055     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3680102     Document Type: Article

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