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Journal of Alloys and Compounds

Volumn 571, Issue , 2013, Pages 153-158

Enhancing device characteristics of 1.3 μm emitting InAs/GaAs quantum dot lasers through dot-height uniformity study

(1) Liu, Wei Sheng a

a YUAN ZE UNIVERSITY (Taiwan)

Author keywords

Molecular beam epitaxy; Quantum dots; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE OPERATION; DEVICE CHARACTERISTICS; EFFECTIVE MASS; EMISSION WAVELENGTH; INTERNAL QUANTUM EFFICIENCY; LOW THRESHOLD CURRENT DENSITY; PHOTO-LUMINESCENT PROPERTIES; PHOTOLUMINESCENCE SPECTRUM;

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT LASERS;

EID: 84877711404 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2013.03.197 Document Type: Article

Times cited : (7)

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